For use at the wavelength of 532 nm, at an operating frequency of 40 MHz with an active aperture of 2x6 mm.Full Product Description
- 532 nm
- Operating frequency:
- 40 MHz
- Active aperture:
- 1·5 mm (vertical)
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Featuring a low power 100mW 40MHz supply requirement and high diffraction efficiency, this device is ideal for use in heterodyne interferometric
systems, particularly laser Doppler velocimetry, and has been designed to facilitate double-pass configurations.
This device has an integrated RF driver and reference frequency output, optimized to achieve a high extinction ratio between modes.
- Low insertion loss
- Excellent power handling
- High diffraction efficiency
- High extinction ratio between modes
- Low power requirement
|Interaction material||Tellurium Dioxide|
|Operating frequency||40 MHz|
|Reflectivity per surface||< 0·2%|
|Minimum optical aperture||4 x 2.0 mm (horizontal and vertical)|
|Active aperture||1·5 mm (vertical)|
|Transmission||> 95% @ 532 nm|
|Diffraction efficiency||Max: > 90% @ 532 nm|
|Polarization state of input beam||Linear and horizontal with respect housing|
|Polarization state of 1st order beam||Linear and orthogonal to input and zero order beams|
|Zero to 1st order polarisation extinction ratio||> 100:1|
|Output configuration||Diffracted & undiffracted Symmetrical to the left and right of the straight through direction ± 0·5º|
|Separation angle||2° (0 to diffracted-order)|
|RF drive power||≤ 80mW|
|Input impedance||50 Ω|
|RF connector||SMA bulkhead jack|
Explanation: Frequency Shifter, 40MHz, 1.5mm active aperture, shear mode, Tellurium Dioxide, 532nm, SMA male, GH83 housing.
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